Application of nanojunction-based RRAM to reconfigurable IC

Micro and Nano Letters

Volumn 3, Issue 3, 2008, Pages 101-105

  Liu, M ^a   Wang, W ^b  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DELAY CIRCUITS;

CMOS TRANSISTORS; CMOS-COMPATIBLE; DENSITY ENHANCEMENT; HIGH-DENSITY; NANOJUNCTION; RE-CONFIGURABLE; RE-CONFIGURABLE ARCHITECTURE; RESISTIVE MEMORY;

FIELD PROGRAMMABLE GATE ARRAYS (FPGA);

ARTICLE; COMPUTER MEMORY; MOLECULAR ELECTRONICS; NANOFABRICATION; NANOTECHNOLOGY; SEMICONDUCTOR;

EID: 53249144577     PISSN: None     EISSN: 17500443     Source Type: Journal    
DOI: 10.1049/mnl:20080029     Document Type: Article

References (16)

1. www.xilinx.com
2. Lemieux, G., and Lewis, D.: ' Circuit design of routing switches ', FPGA 02, February, 2002, p. 452-455
3. Strukov, D.B., and Likharev, K.K.: ' CMOL FPGA: a reconfigurable architecture for hybrid digital circuits with two-terminal nanodevices ', Nanotechnology, 2005, 16, p. 888-900 0957-4484
4. Snider, G., and Williams, S.: ' Nano/CMOS architecture using a field-programmable nanowire interconnect ', Nanotechnology, 2007, 18, p. 035204-035215 0957-4484
5. Dong, C., Liu, D., Haruehanroengra, S., and Wang, W.: ' 3D nFPGA: a reconfigurable architecture for 3D CMOS/nanomaterial hybrid digital circuits ', IEEE Trans. CAS I, 2007, 54, p. 2489-2501 1057-7122
6. Brewer, J.E., Zhirnov, V.V., and Hutchby, J.A.: ' Memory technology for post CMOS era ', IEEE Circuits Devices Mag., 2005, 21, p. 13-20 8755-3996
7. Ignatiev, A., Wu, N.J., and Liu, S.Q.W.: et al. ' Resistance switching memory effect in transition metal oxide thin film ', NVM Technology Symp., November, 2006, p. 100-103
8. Song, Y., Ling, Q.D., and Lim, S.L.: et al. ' Electrically bistable thin-film device based on PVK and GNPs polymer material ', IEEE Electron Device Lett., 2007, 28, p. 107-109 0741-3106
9. Chen, A., Haddad, S., Wu, Y.C., Lan, Z., Fang, T.N., and Kaza, S.: ' Switching characteristics of Cu2O metal-insulator-metal resistive memory ', Appl. Phys. Lett., 2007, 91, p. 123517 0003-6951
10. 2 ', IEEE Trans. Electron Devices, 2007, 54, p. 2762-2768 0018-9383
11. Park, I.S., Kim, K.R., Lee, S., and Ahn, J.: ' Resistance switching characteristics for nonvolatile memory operation of binary metal oxides ', Jpn. J. Appl. Phys., 2007, 46, p. 2172-2174 0021-4922
12. 2 ', IEEE Electron Device Lett., 2008, 29, p. 434-438 0741-3106
13. Lee, D., Seong, D-J., and Jo, I.: et al. ' Resistance switching of copper doped MoOx films for nonvolatile memory applications ', Appl. Phys. Lett., 2007, 90, p. 122104 0003-6951
14. Mustafaa, J., Rüdigera, A., and Waser, R.: ' Comparison of three different architectures for active resistive memories ', Int. J. Electron. Commun., 2007, 61, p. 345-352
15. DeHon, A.: ' Nanowire-based programmable architectures ', ACM J. Emerg. Technol. Comput. Systems, 2005, 1, p. 109-162
16. 'International technology roadmap for semiconductors', http://public.itrs.net, 2007