Charging-induced changes in reverse current-voltage characteristics of Al/Al-Rich Al2O3/p-Si Diodes

IEEE Transactions on Electron Devices

Volumn 56, Issue 9, 2009, Pages 2060-2064

  Zhu, Wei ^a   Chen, T P ^a   Liu, Yang ^a,b   Yang, Ming ^a   Zhang, Sam ^c   Zhang, W L ^c   Fung, S ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Aluminum rich aluminum oxide; Charge trapping; Current transport; Current voltage characteristics; Memory effect; Metal insulator semiconductor (MIS) diodes; Nanocrystals

Indexed keywords

CARRIER INJECTION; CURRENT TRANSPORT; ELECTRON TRAPPING; HOLE TRAPPING; IV CHARACTERISTICS; MEMORY EFFECT; METAL-INSULATOR-SEMICONDUCTOR (MIS) DIODES; OXIDE LAYER; P-TYPE SILICON; RADIO FREQUENCY SPUTTERING; REVERSE CURRENT-VOLTAGE CHARACTERISTICS; REVERSE CURRENTS; SI SUBSTRATES; TUNNELING PATHS;

ALUMINA; ALUMINUM; CHARGE TRAPPING; ELECTRIC POTENTIAL; METAL INSULATOR BOUNDARIES; MIS DEVICES; NANOCRYSTALS; OXIDES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON; SILICON SOLAR CELLS; SUBSTRATES; SWITCHING CIRCUITS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 69549091595     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2026110     Document Type: Article

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