Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities

Nature Physics

Volumn 7, Issue 8, 2011, Pages 626-630

  Chanthbouala, A ^a   Matsumoto, R ^a   Grollier, J ^a   Cros, V ^a   Anane, A ^a   Fert, A ^a   Khvalkovskiy, A V ^a,b,f   Zvezdin, K A ^b,c   Nishimura, K ^d   Nagamine, Y ^d   Maehara, H ^d   Tsunekawa, K ^d   Fukushima, A ^e   Yuasa, S ^e  

^a UNITÉ MIXTE DE PHYSIQUE CNRS THALES   (France)

^b PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

^c Istituto PM Srl   (Italy)

^d Canon ANELVA Corporation ^*  (Japan)

^e NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^f Grandis Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOMAIN WALLS; GROUNDING ELECTRODES; MAGNESIA; MAGNETIC DEVICES; MAGNETIC DOMAINS; MEMRISTORS;

LOW CURRENT DENSITY; MAGNETIC TUNNEL JUNCTION; PLANAR ELECTRODE; POOR EFFICIENCIES; RESISTANCE SWITCHING; SPIN TRANSFER TORQUE; THEORETICAL CALCULATIONS; VERTICAL CURRENT;

TUNNEL JUNCTIONS;

EID: 79961030927     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys1968     Document Type: Article

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