Ambipolar Si nanowire field effect transistors for low current and temperature sensing

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Volumn , Issue , 2011, Pages 2562-2565

  Sacchetto, D ^a   De Micheli, G ^a   Leblebici, Y ^a  

^a EPFL   (Switzerland)

Author keywords

ambipolar; FET; nanowire; Schottky barrier; sensing

Indexed keywords

AMBIPOLAR; CURRENT SENSING; DEVICE SENSITIVITY; FET; HETEROGENEOUS INTEGRATION; LOGIC APPLICATIONS; LOW CURRENTS; LOW-CURRENT SENSING; PROCESS FLOWS; SCHOTTKY BARRIER TRANSISTORS; SCHOTTKY BARRIERS; SENSING; SI NANOWIRE; SILICON NANOWIRE TRANSISTORS; TEMPERATURE SENSING; TEMPERATURE-SENSING DEVICE; TRAP ASSISTED TUNNELING; ULTRA-LOW POWER CONSUMPTION;

ACTUATORS; GATES (TRANSISTOR); MICROSYSTEMS; NANOWIRES; POLYSILICON; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; TEMPERATURE SENSORS;

SOLID-STATE SENSORS;

EID: 80052132653     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/TRANSDUCERS.2011.5969815     Document Type: Conference Paper

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