Spintronic memristor through spin-thorque-induced magnetization motion

IEEE Electron Device Letters

Volumn 30, Issue 3, 2009, Pages 294-297

  Wang, Xiaobin ^a   Chen, Yiran ^a   Xi, Hai ^a   Li, Hai ^a   Dimitrov, Dimitar ^a  

^a SEAGATE TECHNOLOGY   (United States)

Author keywords

Domain wall; Magnetic tunneling junction (MTJ); Memristor; Spin torque; Spintronic

Indexed keywords

MAGNETIC DOMAINS; MAGNETIZATION; MAGNETS; TORQUE; WAVEGUIDE JUNCTIONS;

CONTINUUM STATE; ELECTRONIC CHARGES; MAGNETIC TUNNELING JUNCTION (MTJ); MAGNETIC-DOMAIN; MAGNETIZATION DYNAMICS; MAGNETIZATION MOTIONS; MAGNETIZATION SWITCHING; MEMRISTOR; NANO-SCALE; SPIN TORQUE; SPIN TRANSPORTS; SPINTRONIC; SPINTRONIC DEVICES; TIME-SCALE;

SPIN DYNAMICS;

EID: 62549138717     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2012270     Document Type: Article

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