Memristive devices fabricated with silicon nanowire schottky barrier transistors

ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems

Volumn , Issue , 2010, Pages 9-12

  Sacchetto, Davide ^a   Ben Jamaa, M Haykel ^a   Carrara, Sandro ^a   De Micheli, Giovanni ^a   Leblebici, Yusuf ^a  

^a EPFL   (Switzerland)

Author keywords

Ambipolar; Memristor; Nanowire; Schottky barrier; Transistor

Indexed keywords

AMBIPOLAR; BACK-GATE; CMOS COMPATIBLE; GATE-ALL-AROUND; HIGH INTEGRATION DENSITY; HYBRID CMOS; MEMRISTIVE BEHAVIOR; MEMRISTOR; POLY-SI; RESISTIVE RANDOM ACCESS MEMORY; SCHOTTKY BARRIER TRANSISTORS; SCHOTTKY BARRIERS; SI NANOWIRE; SILICON NANOWIRES;

FABRICS; NANOWIRES; POLYSILICON; RANDOM ACCESS STORAGE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 77955995881     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCAS.2010.5537146     Document Type: Conference Paper

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