Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

Solid-State Electronics

Volumn 72, Issue , 2012, Pages 15-21

  Berthet, Fanny ^a,b   Guhel, Yannick ^a   Gualous, Hamid ^a   Boudart, Bertrand ^a   Trolet, Jean Lionel ^b   Piccione, Marc ^b   Sbrugnera, Vanessa ^c   Grimbert, Bertrand ^c   Gaquire, Christophe ^c  

^a Université de Caen Normandie   (France)

^b EAMEA   (France)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

AlGaN; Electrical performances; Electrical stress; Electrical traps; GaN; HEMT; Reliability

Indexed keywords

ALGAN; ELECTRICAL PERFORMANCE; ELECTRICAL STRESS; ELECTRICAL TRAPS; GAN;

DEGRADATION; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACE STATES; OHMIC CONTACTS; PLASMA THEORY; RELIABILITY; TESTING;

RELIABILITY ANALYSIS;

EID: 84860314082     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.12.002     Document Type: Review

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