Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs

Microwave and Optical Technology Letters

Volumn 34, Issue 1, 2002, Pages 4-6

  Guhel, Y ^a   Boudart, B ^b   Hoel, V ^a   Werquin, M ^a   Gaquiere, C ^a   De Jaeger, J C ^a   Poisson, M A ^c   Daumiller, I ^d   Kohn, E ^d  

^a INSTITUT D ELECTRONIQUE   (France)

^b Université de Caen Normandie   (France)

^c LCR   (France)

^d UNIVERSITY OF ULM   (Germany)

Author keywords

AlGaN GaN HEMTs; HEMTs; Microwave Device Temperature effects

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC FIELD EFFECTS; ELECTRON TRAPS; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVE DEVICES; OHMIC CONTACTS;

CONTACT RESISTIVITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037025024     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.10355     Document Type: Article

References (7)

1. High Al-content AlGaN/GaN HEMTs on SiC substrates with very-high performance
2. Aging behavior of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts
3. Evaluation of temperature stability of AlGaN/GaN Heterostructure FET's
4. Very low resistance ohmic contacts on wide band-gap GaN
5. Comparison between Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN
6. Trap effects studies in GaN MESFETs by pulsed measurements