Electric-field-related reliability of AlGaAs/GaAs power HFETs: Bias dependence and correlation with breakdown

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 1929-1937

  Dieci, Domenico ^b   Sozzi, Giovanna ^c   Menozzi, Roberto ^c   Tediosi, Erika ^d   Lanzieri, Claudio ^e   Canali, Claudio ^a,d  

^a IEEE

^b Ferrari Gestione Sportiva   (Italy)

^c UNIVERSITY OF PARMA   (Italy)

^d UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^e ALENIA SPAZIO   (Italy)

Author keywords

Electric breakdown; FETs; Gallium compounds; Hot carriers; Microwave power FETs; Reliability

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; HOT CARRIERS; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE TESTING; STRESSES;

BIAS DEPENDENCE; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; HOT ELECTRON DEGRADATION; VOLTAGE ACCELERATION LAW;

FIELD EFFECT TRANSISTORS;

EID: 0035445203     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944179     Document Type: Article

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