Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps

Solid-State Electronics

Volumn 49, Issue 10, 2005, Pages 1589-1594

  Guhel, Y ^a   Boudart, B ^a   Vellas, N ^b   Gaquiere C ^b   Delos, E ^b   Ducatteau, D ^b   Bougrioua, Z ^c   Germain, M ^d  

^a Université de Caen Normandie   (France)

^b INSTITUT D ELECTRONIQUE   (France)

^c CRHEA CNRS   (France)

^d IMEC   (Belgium)

Author keywords

AlGaN GaN; Electrical traps; HFET; Plasma; Pre treatment; Surface passivation

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; PASSIVATION; PLASMAS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE;

ELECTRICAL TRAPS; HFET; PRE-TREATMENT; SURFACE PASSIVATION;

PLASMA THEORY;

EID: 27744511519     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.06.025     Document Type: Article

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