Electrical effects of SiNx deposition on GaN MESFETs

Electronics Letters

Volumn 37, Issue 8, 2001, Pages 527-528

  Boudart, B ^a   Gaquiere C ^a   Guhel, Y ^a   De Jaeger, J C ^a   Poisson, M A ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC PROPERTIES; ELECTRODEPOSITION; MESFET DEVICES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; THERMAL EFFECTS;

DIELECTRIC COATING; ELECTRICAL EFFECTS; GALLIUM NITRIDE TRANSISTORS; SILICON NITRIDE DEPOSITION; TEMPERATURE DEPOSITION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035848668     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010324     Document Type: Article

References (5)

1. WU, Y.F., KAPOLNEK, D., IBBETSON, J., ZHANG, N.Q., PARIKH, P., KELLER, B.P., and MISHRA, U.K.: 'High Al-content AlGaN/GaN HEMTs on SiC substrates with very-high performance'. IEDM Dig., Washington DC, Dec. 1999, pp. 925-927
2. GAQUIERE, C., TRASSAERT, S., BOUDART, B., and CROSNIER, Y.: 'High power GaN MESFET on sapphire substrate', IEEE Microw. Guid. Wave Lett., 2000, 10, (1), pp. 19-20
3. TRASSAERT, S., BOUDART, B., GAQUIERE, C., THERON, D., CROSNIER, Y., HUET, F., and POISSON, M.A.: 'Trap effects studies in GaN MESFETs by pulsed measurements', Electron. Lett., 1999, 35, (16), pp. 1386-1388
4. 0.53As layers for InP high electron mobility transistor applications', Appl. Phys. Lett., 1999, 74, (21), pp. 3221-3223
5. FAN, Z.F., MOHAMMAD, S.N., KIM, W., AKTAS. Ö., BOTCHKAREV, A.E., and MORKOÇ, H.: 'Very low resistance multilayer ohmic contacts to n-GaN', Appl. Phys. Lett., 1996, 68, (12), pp. 1672-1674