Effects of RF and DC stress on AlGaN/GaN MODFETs: A low-frequency noise-based investigation

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 3, 2005, Pages 555-563

  Valizadeh, Pouya ^a,b,c   Pavlidis, Dimitris ^a,b,d  

^a IEEE   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c III/V Integrated Circuits and Devices Group   (United States)

^d DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Current degradation; DC stress; Low frequency noise; MODFET; RF stress

Indexed keywords

CURRENT DEGRADATION; DC STRESS; LOW-FREQUENCY NOISE; MODFET; RF STRESS;

ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS;

STRESS ANALYSIS;

EID: 29444444252     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2005.853515     Document Type: Article

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