Degradation characteristics of AlGaN-GaN high electron mobility transistors

IEEE International Reliability Physics Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 214-218

  Kim, Hyungtak ^a   Tilak, V ^a   Green, B M ^a   Cha, Ho Young ^a   Smart, J A ^a   Shealy, J R ^a   Eastman, L F ^a  

^a Cornell University   (United States)

Author keywords

Aluminum gallium nitride; Degradation; Electron mobility; HEMTs; MODFETs; Passivation; Power electronics; Radio frequency; Stress; Temperature

Indexed keywords

ALUMINUM GALLIUM NITRIDE; DEGRADATION; ELECTRON MOBILITY; ELECTRONS; EXTRACTION; GALLIUM NITRIDE; HOT ELECTRONS; MODFETS; PASSIVATION; POWER ELECTRONICS; RELIABILITY; STRESSES; TEMPERATURE;

DEGRADATION CHARACTERISTICS; GAN-BASED DEVICES; GATE CURRENT; HIGH TEMPERATURE; RADIO FREQUENCIES; ROBUST RELIABILITY; STRESS CONDITION; UNDER GATE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84949769734     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2001.922904     Document Type: Conference Paper

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