Remarkable resistance change in plasma oxidized TiOx/TiN x film for memory application

Chinese Physics Letters

Volumn 24, Issue 4, 2007, Pages 1103-1105

  Wu, Liang Cai ^a   Song, Zhi Tang ^a   Liu, Bo ^a   Rao, Feng ^a   Xu, Cheng ^a   Zhang, Ting ^a   Yin, Wei Jun ^a   Feng, Song Lin ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETRON SPUTTERING; PHASE CHANGE MATERIALS;

0.18-ΜM CMOS; BOTTOM ELECTRODE CONTACTS; CMOS TECHNOLOGY; CURRENT-VOLTAGE MEASUREMENTS; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MEMORY APPLICATIONS; RESISTANCE CHANGE; TIN X; TIO;

REACTIVE ION ETCHING;

EID: 34247146492     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/4/070     Document Type: Article

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