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ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Volumn , Issue , 2009, Pages 221-224

Improvement of resistive switching properties in ZrO2-based ReRAM with implanted metal ions

(7) Qi, Liu a,b Ming, Liu a Shibing, Long a Wei, Wang c Manhong, Zhang a Qin, Wang a Junning, Chen b

a INSTITUTE OF MICROELECTRONICS (China)

b ANHUI UNIVERSITY (China)

c STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION OF; CONDUCTIVE FILAMENTS; METAL-DOPED; NARROW DISTRIBUTION; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; RESISTIVE SWITCHING; SWITCHING PARAMETERS;

CRYSTAL IMPURITIES; ELECTROFORMING; METAL IONS; METALS; OXYGEN; PLATINUM; RANDOM ACCESS STORAGE; SWITCHING; SWITCHING SYSTEMS; TRACE ANALYSIS; ZIRCONIUM ALLOYS;

OXYGEN VACANCIES;

EID: 72849130730 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/ESSDERC.2009.5331613 Document Type: Conference Paper

Times cited : (14)

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