SCOPUS 정보 검색 플랫폼

Chinese Physics Letters

Volumn 25, Issue 6, 2008, Pages 2187-2189

Improved resistive switching characteristics of Ag-doped ZrO2 films fabricated by sol-gel process

(7) Sun, Bing a Liu, Li Feng a Han, De Dong a Wang, Yi a Liu, Xiao Yan a Han, Ru Qi a Kang, Jin Feng a

a PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

PLATINUM COMPOUNDS; RANDOM ACCESS STORAGE; SILICON COMPOUNDS; SOL-GEL PROCESS; ZIRCONIA;

AG DOPED; MEMORY APPLICATIONS; RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SI SUBSTRATES; SIO 2; SWITCHING CHARACTERISTICS; THIN-FILMS; ZRO 2 FILMS;

SEMICONDUCTOR DOPING;

EID: 46749125770 PISSN: 0256307X EISSN: 17413540 Source Type: Journal
DOI: 10.1088/0256-307X/25/6/072 Document Type: Article

Times cited : (21)

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