Resistance switching characteristics in Li-doped NiO

Journal of Applied Physics

Volumn 103, Issue 3, 2008, Pages

  Jung, Kyooho ^a   Choi, Joonhyuk ^a   Kim, Yongmin ^a   Im, Hyunsik ^a   Seo, Sunae ^b   Jung, Ranju ^b   Kim, Dongchul ^b   Kim, J S ^c   Park, B H ^c   Hong, J P ^d  

^a Dongguk University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Konkuk University   (South Korea)

^d Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH PLATING; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HIGH TEMPERATURE EFFECTS; LITHIUM; POLYCRYSTALLINE MATERIALS;

COMPLIANCE; NIO FILM; RESISTIVE SWITCHING TRANSPORT;

NICKEL OXIDE;

EID: 39349110003     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2837102     Document Type: Article

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