Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Lee, Dongsoo ^a   Seong, Dong Jun ^a   Choi, Hye Jung ^a   Jo, Inhwa ^a   Dong, R ^a   Xiang, W ^a   Oh, Seokjoon ^a   Pyun, Myeongbum ^a   Seo, Sun Ok ^a   Heo, Seongho ^a   Jo, Minseok ^a   Hwang, Dae Kyu ^a   Park, H K ^a   Chang, M ^a   Hasan, M ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRON DEVICES; METALS; MOLYBDENUM; MOLYBDENUM COMPOUNDS;

BINARY METAL OXIDES; MEMORY APPLICATIONS; METAL OXIDES; MOLYBDENUM OXIDES; NON-VOLATILE; RESISTANCE SWITCHING;

COPPER OXIDES;

EID: 46049092606     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346733     Document Type: Conference Paper

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