Growth and electronic transport properties of epitaxial graphene on SiC

Journal of Physics D: Applied Physics

Volumn 45, Issue 15, 2012, Pages

  Hibino, H ^a,a   Tanabe, S ^a,a   Mizuno, S ^b,b   Kageshima, H ^a,a  

^a Bio Medical Informatics Research Center   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; ELECTRONIC TRANSPORT PROPERTIES; EPITAXIAL BILAYERS; EPITAXIAL GRAPHENE; EPITAXIALLY GROWN; STACKING ORDER; STRUCTURAL AND PHYSICAL PROPERTIES; TOP-GATE;

DECOMPOSITION; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; MONOLAYERS; QUANTUM HALL EFFECT; SILICON CARBIDE; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 84859237952     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/15/154008     Document Type: Article

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