Epitaxial graphene growth studied by low-energy electron microscopy and first-principles

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 597-602

  Kageshima, Hiroyuki ^a   Hibino, Hiroki ^a   Nagase, Masao ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

Epitaxial growth; First principles calculation; Graphene; LEEM; Mechanism

Indexed keywords

CALCULATIONS; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; ELECTRONS; EPITAXIAL GROWTH; GRAPHENE DEVICES; MECHANISMS; MORPHOLOGY; SILICON CARBIDE; SURFACE MORPHOLOGY; ULSI CIRCUITS;

EPITAXIAL GRAPHENE; FIRST PRINCIPLES; FIRST-PRINCIPLES CALCULATION; GRAPHENE SHEETS; LEEM; LOW ENERGY ELECTRON MICROSCOPY; SPATIAL RESOLUTION; ULTRALARGE SCALE INTEGRATION;

GRAPHENE;

EID: 77955440468     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.597     Document Type: Conference Paper

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