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Applied Physics Express

Volumn 3, Issue 7, 2010, Pages

Half-integer quantum hall effect in gate-controlled epitaxial graphene devices

(5) Tanabe, Shinichi a Sekine, Yoshiaki a Kageshima, Hiroyuki a Nagasey, Masao a,b Hibino, Hiroki a

a Bio Medical Informatics Research Center (Japan)

b UNIVERSITY OF TOKUSHIMA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; DEVICE FABRICATIONS; ELECTRICAL PROPERTY; ELECTRONICS APPLICATIONS; EPITAXIAL GRAPHENE; HIGH QUALITY; QUANTUM HALL EFFECT; QUANTUM HALL STATE; THERMAL DECOMPOSITIONS; TOP-GATE;

CARRIER MOBILITY; ELECTRIC PROPERTIES; GRAPHENE; GRAPHITE; GYRATORS; HALL EFFECT; HALL EFFECT DEVICES; MONOLAYERS; PYROLYSIS; QUANTUM THEORY; SILICON CARBIDE;

MAGNETIC FIELD EFFECTS;

EID: 77954463948 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.075102 Document Type: Article

Times cited : (64)

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