Epitaxial few-layer graphene: towards single crystal growth

Journal of Physics D: Applied Physics

Volumn 43, Issue 37, 2010, Pages

  Hibino, H ^a   Kageshima, H ^a   Nagase, M ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; FIRST-PRINCIPLES SCHEMES; GAIN INSIGHT; GRAPHENE LAYERS; GROWTH MECHANISMS; GROWTH PROCESS; LOW ENERGY ELECTRON MICROSCOPY; MICROSCOPIC OBSERVATIONS; PHOTOELECTRON EMISSION MICROSCOPY; SIC SUBSTRATES;

BINDING ENERGY; CRYSTAL GROWTH; CRYSTALLIZATION; SCANNING PROBE MICROSCOPY; SILICON CARBIDE; SINGLE CRYSTALS;

GRAPHENE;

EID: 78249254546     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/37/374005     Document Type: Article

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