Theoretical study of epitaxial graphene growth on SiC(0001) surfaces

Applied Physics Express

Volumn 2, Issue 6, 2009, Pages

  Kageshima, Hiroyuki ^a   Hibino, Hiroki ^a   Nagase, Masao ^a   Yamaguchi, Hiroshi ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

C ATOMS; EPITAXIAL GRAPHENE; FIRST-PRINCIPLES CALCULATION; GRAPHENE; GRAPHENE SHEETS; SI ATOMS; SIC SUBSTRATES; THEORETICAL STUDY;

ATOMS; DESORPTION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SILICON; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67949102117     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.065502     Document Type: Article

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