Epitaxial growth of large-area single-layer graphene over Cu(1 1 1)/sapphire by atmospheric pressure CVD

Carbon

Volumn 50, Issue 1, 2012, Pages 57-65

  Hu, Baoshan ^a   Ago, Hiroki ^a   Ito, Yoshito ^a   Kawahara, Kenji ^a   Tsuji, Masaharu ^a   Magome, Eisuke ^b   Sumitani, Kazushi ^b   Mizuta, Noriaki ^a   Ikeda, Ken Ichi ^a   Mizuno, Seigi ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b Kyushu Synchrotron Light Research Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; ATMOSPHERIC PRESSURE CVD; C-PLANE SAPPHIRE; CARBON ATOMS; CRYSTALLOGRAPHIC DIRECTIONS; CU FILMS; CU(1 1 1); HEXAGONAL LATTICE; HIGH QUALITY; HIGHER TEMPERATURES; LOW QUALITIES; POLYCRYSTALLINE; RAMAN D-BAND; SI WAFER; SINGLE LAYER;

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; COPPER; CRYSTAL LATTICES; EPITAXIAL GROWTH; FILM GROWTH; GRAPHENE; ISOTOPES; SAPPHIRE; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

CHEMICAL VAPOR DEPOSITION;

EID: 80053605863     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2011.08.002     Document Type: Conference Paper

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