Instability of steps during Ga deposition on Si(1 1 1)

Surface Science

Volumn 602, Issue 14, 2008, Pages 2421-2426

  Hibino, H ^a   Kageshima, H ^a   Uwaha, M ^b  

^a NTT Basic Research Laboratories   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Atomic force microscopy; Gallium; Low energy electron microscopy (LEEM); Silicon; Stepped single crystal surfaces; Surface structure, morphology, roughness, and topography

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMIC PHYSICS; ATOMS; MICROSCOPIC EXAMINATION; SCANNING PROBE MICROSCOPY; SILICON;

ATOM DENSITY; ATOMIC FORCE (AF); ELSEVIER (CO); FOREIGN ATOMS; LOW ENERGY ELECTRON MICROSCOPY (LEEM); SHAPE CHANGES; SI ATOMS; TRANSITION (JEL CLASSIFICATIONS:E52 ,E41 ,E31);

CRYSTAL ATOMIC STRUCTURE;

EID: 48149113621     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.05.023     Document Type: Article

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