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Applied Physics Letters

Volumn 97, Issue 11, 2010, Pages

Charge transfer between epitaxial graphene and silicon carbide

(4) Kopylov, S V a Tzalenchuk, Alexander b Kubatkin, Sergey c Fal'Ko, Vladimir I a

a LANCASTER UNIVERSITY (United Kingdom)

b NATIONAL PHYSICAL LABORATORY (United Kingdom)

c CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; GRAPHENE; ION EXCHANGE; MONOLAYERS; SILICON CARBIDE;

BI-LAYER; DENSITY VARIATIONS; DONOR STATE; ELECTRON DENSITIES; ELECTROSTATIC GATES; EPITAXIAL GRAPHENE; RESPONSIVITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956814214 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3487782 Document Type: Article

Times cited : (163)

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