Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC

Materials Research Society Symposium Proceedings

Volumn 1283, Issue , 2011, Pages 40-45

  Tanabe, Shinichi ^a   Sekine, Yoshiaki ^a   Kageshima, Hiroyuki ^a   Nagase, Masao ^a,b   Hibino, Hiroki ^a  

^a NTT Corporation and CREST of Japan Science and Technology   (Japan)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CHARGE NEUTRALITY; ELECTRONIC TRANSPORT PROPERTIES; EPITAXIALLY GROWN; GRAPHENE DEVICES; TEMPERATURE DEPENDENCE;

DECOMPOSITION; ELECTRON DEVICES; ELECTRONIC STRUCTURE; MONOLAYERS; QUANTUM HALL EFFECT; SILICON CARBIDE; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 84859038752     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2011.675     Document Type: Conference Paper

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