Low-temperature synthesis of graphene and fabrication of top-gated field effect transistors without using transfer processes

Applied Physics Express

Volumn 3, Issue 2, 2010, Pages

  Kondo, Daiyu ^a,b   Sato, Shintaro ^a,b   Yagi, Katsunori ^a   Harada, Naoki ^a   Sato, Motonobu ^a,b   Nihei, Mizuhisa ^a,b   Yokoyama, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR BEHAVIOR; CONTROLLED GROWTH; FABRICATED DEVICE; FE FILMS; GRAPHENES; GROWTH MECHANISMS; HIGH-DENSITY; LOW TEMPERATURE SYNTHESIS; SOURCE AND DRAIN ELECTRODES; THERMAL CHEMICAL VAPOR DEPOSITION; TRANSFER PROCESS;

ELECTRODES; FABRICATION; GRAPHENE; GRAPHITE; HAFNIUM COMPOUNDS; MESFET DEVICES; SYNTHESIS (CHEMICAL);

FIELD EFFECT TRANSISTORS;

EID: 76949104076     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.025102     Document Type: Article

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