High-frequency modeling of TSVs for 3-D chip integration and silicon interposers considering skin-effect, dielectric quasi-TEM and slow-wave modes

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 1, Issue 10, 2011, Pages 1627-1641

  Ndip, Ivan ^a,b   Curran, Brian ^a,b   Löbbicke, Kai ^a,b   Guttowski, Stephan ^a,b   Reichl, Herbert ^a,b   Lang, Klaus Dieter ^a,b   Henke, Heino ^b  

^a FRAUNHOFER IZM   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Dielectric quasi TEM mode; per unit length circuit parameters; skin effect mode; slow wave mode; through silicon via

Indexed keywords

PER-UNIT-LENGTH CIRCUIT PARAMETERS; QUASI-TEM; SKIN-EFFECT MODE; SLOW WAVE; THROUGH-SILICON VIA;

ELECTRIC NETWORK PARAMETERS; ELECTROMAGNETIC FIELDS; ELECTRONICS PACKAGING; SILICA; SYSTEMS ANALYSIS;

THREE DIMENSIONAL;

EID: 84859098960     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2011.2164915     Document Type: Article

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