High frequency characterization and modeling of high density TSV in 3D integrated circuits

2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09

Volumn , Issue , 2009, Pages

  Bermond, C ^a   Cadix, L ^a,b   Farcy, A ^b   Lacrevaz, T ^a   Leduc, P ^c   Flechet B ^a  

^a UNIVERSITÉ DE SAVOIE   (France)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATED CIRCUIT; HIGH DENSITY; HIGH-FREQUENCY CHARACTERIZATION; MATERIAL CHARACTERISTICS; THROUGH SILICON VIAS; WAFER THINNING;

ASPECT RATIO; INTEGRATED CIRCUITS; INTERCHANGES; SILICON WAFERS;

THREE DIMENSIONAL;

EID: 70350000414     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SPI.2009.5089840     Document Type: Conference Paper

References (7)

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7. Dong Min Jang, et al, "Development and Evaluation of 3D Sip with Vertically Interconnected Through Silicon Vias (TSV)," IEEE Electronic Components and Technology Conference 2007