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Volumn 1, Issue , 2006, Pages 215-220

High frequency electrical model of through wafer via for 3-D stacked chip packaging

Author keywords

[No Author keywords available]

Indexed keywords

CHIP SCALE PACKAGES; CIRCUIT SIMULATION; EQUIVALENT CIRCUITS; PARAMETER ESTIMATION; SILICON WAFERS;

EID: 42549142869     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESTC.2006.280001     Document Type: Conference Paper
Times cited : (91)

References (6)
  • 1
    • 0028125418 scopus 로고
    • Fabrication technology for wafer through-hole hinterconnections and three-dimensional stacks of chips and wafers, in Proc
    • S. Linder, H. Baltes, F. Gnaedinger, and E. Doering, "Fabrication technology for wafer through-hole hinterconnections and three-dimensional stacks of chips and wafers", in Proc. MEMS, 1994, pp. 349-354.
    • (1994) MEMS , pp. 349-354
    • Linder, S.1    Baltes, H.2    Gnaedinger, F.3    Doering, E.4
  • 5
    • 24344491536 scopus 로고    scopus 로고
    • Microwave Characterization and Modeling of High Apect Ratio Through-Wafer Interconnect Vias in Silicon Substrates
    • August
    • L. L. W. Leung, and K. J. Chen, "Microwave Characterization and Modeling of High Apect Ratio Through-Wafer Interconnect Vias in Silicon Substrates", IEEE Transation on Microwave Theory and Techniques, " Vol. 53, No. 8, pp 2472-2480, August 2005
    • (2005) IEEE Transation on Microwave Theory and Techniques , vol.53 , Issue.8 , pp. 2472-2480
    • Leung, L.L.W.1    Chen, K.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.