RF characterization and analytical modelling of through silicon vias and coplanar waveguides for 3D integration

IEEE Transactions on Advanced Packaging

Volumn 33, Issue 4, 2010, Pages 1072-1079

  Lamy, Yann P R ^a   Jinesh, K B ^a   Roozeboom, Fred ^a   Gravesteijn, Dirk J ^a   Besling, Wim F A ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Radio frequency (RF) characterisation; RF modeling; Si interposer; three dimensional interconnects; through silicon via; through wafer interconnect; TSV; vias

Indexed keywords

CHARACTERISATION; RF MODELING; SI INTERPOSER; THREE-DIMENSIONAL INTERCONNECTS; THROUGH-SILICON-VIA; THROUGH-WAFER INTERCONNECT; TSV; VIAS;

ASPECT RATIO; COPLANAR WAVEGUIDES; ELECTROPLATING; MATHEMATICAL MODELS; SCATTERING PARAMETERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THREE DIMENSIONAL COMPUTER GRAPHICS; WAFER BONDING;

THREE DIMENSIONAL;

EID: 78651340613     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/TADVP.2010.2046166     Document Type: Article

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