A through-wafer interconnect in silicon for RFICs

IEEE Transactions on Electron Devices

Volumn 51, Issue 11, 2004, Pages 1765-1771

  Wu, Joyce H ^a   Scholvin, Jörg ^a   del Alamo, Jesús A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; INDUCTANCE; MICROELECTROMECHANICAL DEVICES; RADIO FREQUENCY AMPLIFIERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE; SPURIOUS SIGNAL NOISE; SUBSTRATES;

FARADAY CAGE STRUCTURE; GROUND INDUCTANCE; SILICON RF TECHNOLOGY; SUBSTRATE CROSSTALK SUPPRESSION; SUBSTRATE NOISE; SYSTEM ON CHIP (SOC); THREE DIMESIONAL INTERCONNECTS; THROUGH WAFER INTERCONNECT;

MICROWAVE INTEGRATED CIRCUITS;

EID: 8144229690     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.837378     Document Type: Article

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