Electromagnetic modeling of through-silicon via (TSV) interconnections using cylindrical modal basis functions

IEEE Transactions on Advanced Packaging

Volumn 33, Issue 4, 2010, Pages 804-817

  Han, Ki Jin ^a   Swaminathan, Madhavan ^b   Bandyopadhyay, Tapobrata ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

RLGC; extraction; Cylindrical modal basis function; excess capacitance; integral equation; interconnection modeling; three dimensional (3 D) integration; through silicon via (TSV)

Indexed keywords

CYLINDRICAL MODAL BASIS FUNCTION; EXCESS CAPACITANCE; INTERCONNECTION MODELING; RLGC EXTRACTION; THREE-DIMENSIONAL (3-D) INTEGRATION; THROUGH-SILICON VIA;

CAPACITANCE; INTEGRAL EQUATIONS; MAXWELL EQUATIONS;

THREE DIMENSIONAL;

EID: 78651326478     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/TADVP.2010.2050769     Document Type: Article

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