Suppression of power/ground inductive Impedance and simultaneous switching noise using silicon through-via in a 3-D stacked chip package

IEEE Microwave and Wireless Components Letters

Volumn 17, Issue 12, 2007, Pages 855-857

  Ryu, Chunghyun ^a   Park, Jiwoon ^a   Pak, Jun So ^a   Lee, Kwangyong ^b   Oh, Taesung ^b   Kim, Joungho ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hong Ik University   (South Korea)

Author keywords

3 D stacked chip package; Power distribution network (PDN) impedance; Silicon through via (STV); Simultaneous switching noise (SSN)

Indexed keywords

CHIP SCALE PACKAGES; ELECTRIC POWER DISTRIBUTION; SILICON;

3-D STACKED CHIP PACKAGE; POWER DISTRIBUTION NETWORK (PDN) IMPEDANCE; SILICON THROUGH-VIA (STV) INTERCONNECTION; SIMULTANEOUS SWITCHING NOISE (SSN);

ELECTRIC IMPEDANCE;

EID: 36749052413     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2007.910485     Document Type: Article

References (4)

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2. J. Lee, H. Kim, and J. Kim, "High dielectric constant thin film EBG power/ground network for broad-band suppression of SSN and radiated emissions," IEEE Microw. Wireless Compon. Lett., vol. 15, no. 8, pp. 505-507, Aug. 2005.
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