Development of silicon module with TSVs and global wiring (L/S=0.8/0.8μm)

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2009, Pages 25-31

  Sunohara, Masahiro ^a   Shiraishi, Akinori ^a   Taguchi, Yuichi ^a   Murayama, Kei ^a   Higashi, Mitsutoshi ^a   Shimizu, Mitsuharu ^a  

^a SHINKO ELECTRIC INDUSTRIES CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AIR-GAPS; COEFFICIENT OF THERMAL EXPANSION; CU WIRING; GLOBAL WIRING; HIGH DENSITY; HIGH RELIABILITY; HIGH TRANSMISSION; KEY TECHNOLOGIES; MICRO-BUMPS; SIGNAL INTEGRITY; SILICON DEVICES; SILICON MODULES; SILICON SUBSTRATES; SMOOTH SURFACE; STRESS REDUCTION; SUBMICRON; THROUGH SILICON VIAS; TRANSIENT LIQUID PHASE;

CUSTOMER SATISFACTION; ELECTRIC WIRING; LOGIC DEVICES; SUBSTRATES;

THERMAL EXPANSION;

EID: 70349670804     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2009.5073992     Document Type: Conference Paper

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