Measurements of permittivity, dielectric loss tangent, and resistivity of float-zone silicon at microwave frequencies

IEEE Transactions on Microwave Theory and Techniques

Volumn 54, Issue 11, 2006, Pages 3995-4000

  Krupka, Jerzy ^a,b   Breeze, Jonathan ^c   Centeno, Anthony ^c   Alford, Neil ^c   Claussen, Thomas ^d,e   Jensen, Leif ^d  

^a IEEE   (Poland)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c LONDON SOUTH BANK UNIVERSITY   (United Kingdom)

^d Topsil Semiconductor Materials AS   (Denmark)

^e PBI Dansensor ^*  (Denmark)

Author keywords

Conductivity measurement; Dielectric losses; Dielectric resonators; Permittivity measurement; Semiconductor materials measurements; Silicon

Indexed keywords

CONDUCTIVITY MEASUREMENT; DIELECTRIC RESONATORS; MICROWAVE FREQUENCIES; SEMICONDUCTOR MATERIALS MEASUREMENTS;

CHARGE CARRIERS; DIELECTRIC LOSSES; ELECTRIC CONDUCTIVITY; FREQUENCY HOPPING; MICROWAVES; PERMITTIVITY MEASUREMENT; RESONATORS;

SEMICONDUCTING SILICON;

EID: 33750811880     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2006.883655     Document Type: Article

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