Influence of Bosch etch process on electrical isolation of TSV structures

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 1, Issue 10, 2011, Pages 1497-1507

  Ranganathan, Nagarajan ^a   Lee, Da Yong ^a   Youhe, Liu ^a   Lo, Guo Qiang ^a   Prasad, Krishnamachar ^b   Pey, Kin Leong ^c  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b AUCKLAND UNIVERSITY OF TECHNOLOGY   (New Zealand)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

3 D integrated circuit; bosch etch process; deep reactive ion etching; finite element; leakage current; through silicon vias

Indexed keywords

3-D INTEGRATED CIRCUIT; DEEP REACTIVE ION ETCHING; ETCH PROCESS; FINITE ELEMENT; THROUGH SILICON VIAS;

FINITE ELEMENT METHOD; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; STRESS CONCENTRATION; TANTALUM; THREE DIMENSIONAL;

SHELLFISH;

EID: 84859044803     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2011.2160395     Document Type: Article

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