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Volumn , Issue , 2008, Pages

Thermo-mechanics of 3D-wafer level and 3D stacked IC packaging technologies

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATION; IC PACKAGING; INTERNATIONAL CONFERENCES; MECHANICAL RELIABILITY; MICRO-SYSTEMS; MINIATURISATION; MULTI-PHYSICS SIMULATION; THERMAL RESISTANCE; WAFER LEVELS;

EID: 49249089484     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESIME.2008.4525106     Document Type: Conference Paper
Times cited : (37)

References (11)
  • 1
    • 49249083877 scopus 로고    scopus 로고
    • E Beyne, 4th International Symposium on Microelectronics and packaging, pp. 25-34, ISMP2005, Seoul, Korea, September 28-29, 2005.
    • E Beyne, 4th International Symposium on Microelectronics and packaging, pp. 25-34, ISMP2005, Seoul, Korea, September 28-29, 2005.
  • 2
    • 49249098238 scopus 로고    scopus 로고
    • 3D-integration: A status report, proceedings "3D Architectures for semiconductor integration and packaging"n RTI international, Burlingame, Tempe, Arizona
    • June 13-15
    • P. Garrou, 3D-integration: a status report, proceedings "3D Architectures for semiconductor integration and packaging"n RTI international, Burlingame, Tempe, Arizona, June 13-15, 2005.
    • (2005)
    • Garrou, P.1
  • 3
    • 49249091996 scopus 로고    scopus 로고
    • S. List, The third dimension: fact or fiction, 3D Architectures for semiconductor integration and packagingn RTI international, Burlingame, Tempe, Arizona, June 13-15, 2005.
    • S. List, The third dimension: fact or fiction, "3D Architectures for semiconductor integration and packaging"n RTI international, Burlingame, Tempe, Arizona, June 13-15, 2005.
  • 4
    • 4644301667 scopus 로고    scopus 로고
    • th International Electronics Manufacturing Technology Symposium, July 2004, pp. 64-67.
    • th International Electronics Manufacturing Technology Symposium, July 2004, pp. 64-67.
  • 8
    • 33847111156 scopus 로고    scopus 로고
    • Influence of dielectric materials and via geometry on the thermomechanical behavior of silicon through interconnects
    • SMTA, Kauai, HI, USA, pp, Jan
    • M. Gonzalez, R. Labie, B. Vandevelde, E. Beyne, Influence of dielectric materials and via geometry on the thermomechanical behavior of silicon through interconnects, 10th Annual SMTA Pan Pacific Microelectronics Symposium & Exhibition, SMTA, Kauai, HI, USA, pp.9-14, Jan. 2005.
    • (2005) 10th Annual SMTA Pan Pacific Microelectronics Symposium & Exhibition , pp. 9-14
    • Gonzalez, M.1    Labie, R.2    Vandevelde, B.3    Beyne, E.4
  • 9
    • 49249135307 scopus 로고    scopus 로고
    • I. Francois; S. Tezcan Deniz; C. Teixeira Ricardo; Soussan Philippe; Baert Kris, 3D Embedding and Interconnection of Ultra Thin (< 20 μm) Silicon Dies, EPTC 2007, 10-12 December 2007, Singapore (accepted)
    • I. Francois; S. Tezcan Deniz; C. Teixeira Ricardo; Soussan Philippe; Baert Kris, "3D Embedding and Interconnection of Ultra Thin (< 20 μm) Silicon Dies", EPTC 2007, 10-12 December 2007, Singapore (accepted)
  • 10
    • 46049098824 scopus 로고    scopus 로고
    • B.Swinnen, W.Ruythooren, P.De Moor, L.Bogaerts, L.Carbonell, K.De Munck, B.Eyckens, S.Stoukatch, D.Sabuncuoglu Tezcan, Z.Tokei, J.Vaes, J.Van Aelst, E.Beyne, 3D integration by Cu-Cu thermo-compression bonding of extremely thinned bulk-Si die containing 10 μm pitch through-Si vias, International Electron Devices Meeting - IEDM. Technical Digest, IEEE, San Francisco, CA, USA, Dec. 2006.
    • B.Swinnen, W.Ruythooren, P.De Moor, L.Bogaerts, L.Carbonell, K.De Munck, B.Eyckens, S.Stoukatch, D.Sabuncuoglu Tezcan, Z.Tokei, J.Vaes, J.Van Aelst, E.Beyne, "3D integration by Cu-Cu thermo-compression bonding of extremely thinned bulk-Si die containing 10 μm pitch through-Si vias", "International Electron Devices Meeting - IEDM. Technical Digest", IEEE, San Francisco, CA, USA, Dec. 2006.
  • 11
    • 0000876593 scopus 로고
    • Nonlinear piezoresistance effects in Silicon
    • Feb
    • Matsuda K., et al "Nonlinear piezoresistance effects in Silicon" J. Appl. Phys. Vol. 73, No. 4, Feb. 1993, pp. 1838-1846.
    • (1993) J. Appl. Phys , vol.73 , Issue.4 , pp. 1838-1846
    • Matsuda, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.