Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method

Applied Physics Letters

Volumn 83, Issue 3, 2003, Pages 524-526

  Yiang, K Y ^a   Yoo, W J ^a   Guo, Q ^b   Krishnamoorthy, Ahila ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTRIC CONDUCTANCE; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON TRAPS; SEMICONDUCTOR DOPING;

DIELECTRIC BREAKDOWN;

SILICA;

EID: 0042126725     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1592618     Document Type: Article

References (12)

1. S. P. Jeng, R. H. Havemann, and M. Chang, Mater. Res. Soc. Symp. Proc. 337, 25 (1994).
2. R. Tsu, J. W. McPherson, and W. R. McKee, Proceedings of the 38th Annual International Reliability Physics Symposium, San Jose, CA, 2000, p. 348.
3. C. Steinbruchel and B. L. Chin, Copper Interconnect Technology (SPIE, Bellingham, WA (2001), Vol. TT46, p. 57.
4. B. Pang, W.-F. Yau, P. Lee, and M. Naik, Semiconductor Fabtech, 10th ed. (ICG, London, 1999), pp. 285-289.
5. F.-C. Chiu, J.-J. Wang, J. Y.-M. Lee, and S. C. Wu, J. Appl. Phys. 81, 6911 (1997).
6. D. Nataraj, K. Senthil, S. A. K. Narayandass, and D. Mangalaraj, Cryst. Res. Technol. 34, 867 (1999).
7. J.-H. Lee, J.-H. Lee, Y.-S. Kim, H.-S. Jung, N.-I. Lee, H.-K. Kang, and K.-P. Suh, Symp. on VLSI Technol. Digest of Tech. Papers (IEEE, Piscataway, NJ, 2000), 114.
8. S. Blonkowski, M. Regache, and A. Halimaoui, J. Appl. Phys. 90, 1501 (2001).
9. S. A. Campbell, H.-S. Kim, D. C. Gilmer, B. He, T. Ma, and W. L. Gladfelter, Ultrathin Dielectric Films 43, 383 (1999).
10. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 403.
11. M. Ohring, Reliability and Failure of Electronic Materials and Devices (Academic, New York, 1998), p. 305.
12. J. Noguchi, N. Ohashi, J.-I. Yasuda, T. Jimbo, H. Yamaguchi, N. Owada, K.-ichi Takeda, and K. Hinode, Proceedings of the 38th Annual International Reliability Physics Symposium, San Jose, CA, 2000, p. 339.