Characterization of a time multiplexed inductively coupled plasma etcher

Journal of the Electrochemical Society

Volumn 146, Issue 1, 1999, Pages 339-349

  Ayon A A ^a   Braff, R ^a   Lin, C C ^a   Sawin, H H ^a   Schmidt, M A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ASPECT RATIO; ELECTROCHEMICAL ELECTRODES; PHOTORESISTS; PRESSURE EFFECTS; REACTIVE ION ETCHING; SILICON WAFERS;

ASPECT RATIO DEPENDENT ETCHING (ARDE); TIME MULTIPLEXED INDUCTIVELY COUPLED PLASMA ETCHING;

PLASMA ETCHING;

EID: 0032753082     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391611     Document Type: Article

References (4)

1. E. H. Klaasen, K. Petersen, J. M. Noworolski, J. Logan, N. I. Maluf, J. Brown, C. Storment, W. McCulley, and G. T. A. Kovacs, in Proceedings of Transducers '95, p. 556, Stockholm (1995).
2. A. H. Epstein and S. D. Senturia, Science, 276, 1211 (1997).
3. P. J. Hesketh and J. D. Harrison, The Electrochemical Society, Interface, 3(4) (1994).
4. W. Ehrfeld, P. Bley, F. Gotz, P. Hagmann, A. Maner, J. Mohr, H. O. Moser, D. Munchmeyer, D. Schmidt, and E. W. Becker, in Proceedings of the IEEE Micro Robots and Teleoperators Workshop, Hyannis, MA, IEEE (1987).