Interlevel dielectric failures in copper/low-k structures

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 2, 2004, Pages 148-152

  Alers, Glenn B ^a   Jow, K ^a   Shaviv, R ^a   Kooi, Gerrit ^a   Ray, G W ^a  

^a Novellus Systems   (United States)

Author keywords

Adhesion; Bias temperature stress (BTS); Copper; Dielectric; Low k

Indexed keywords

ADHESION; COPPER; CRACK INITIATION; ELECTRIC POTENTIAL; FAILURE (MECHANICAL); MATHEMATICAL MODELS; STRESS ANALYSIS;

BIAS-TEMPERATURE STRESS (BTS); LOW K; TIME-DEPENDANT DIELECTRIC BREAKDOWN (TDDB); VOLTAGE-RAMPED BREAKDOWN;

DIELECTRIC MATERIALS;

EID: 4043140770     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.831989     Document Type: Article

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