Leakage mechanism in Cu damascene structure with methylsilane-doped low-k CVD oxide as intermetal dielectric

IEEE Electron Device Letters

Volumn 22, Issue 6, 2001, Pages 263-265

  Wu, Zhen Cheng ^a   Chiang, Chiu Chih ^a   Wu, Wei Hao ^a   Chen, Mao Chieh ^a   Jeng, Shwang Ming ^b   Li, Lain Jong ^b   Jang, Syun Ming ^b   Yu, Chen Hua ^b   Liang, Mong Song ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Copper; CVD oxides; Damascene structures; Frenkel Poole (F P) emission; Low k dielectrics; Methylsilane; Organosilicate glass (OSG)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); SILICON CARBIDE; SILICON NITRIDE;

ETCHING STOP LAYERS (ESL); INTERMETAL DIELECTRICS (IMD); ORGANOSILICATE GLASSES (OSG);

DIELECTRIC MATERIALS;

EID: 0035362458     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.924836     Document Type: Article

References (5)

1. Comparative study of physical and electrical characteristics of F- and C-doped low-k CVD oxides
2. 3-plasma nitridation on the electrical characterizations of low-k hydrogen silsesquioxane with copper interconnects
3. 2 and anneal
4. Electrical measurements of moisture penetration through passivation