Continuous deep reactive ion etching of tapered via holes for three-dimensional integration

Journal of Micromechanics and Microengineering

Volumn 18, Issue 12, 2008, Pages

  Li, R ^a   Lamy, Y ^b   Besling, W F A ^b   Roozeboom, F ^b,c   Sarro, P M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ETCHING; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; PRESSURE DROP; SILICON COMPOUNDS; SULFUR HEXAFLUORIDE; THREE DIMENSIONAL; X RAY PHOTOELECTRON SPECTROSCOPY;

3D INTEGRATIONS; DEEP REACTIVE ION ETCHINGS; ETCH RATES; ETCHING MECHANISMS; MEMS PACKAGING; PASSIVATION LAYERS; PLASMA PROCESSES; PROCESS PARAMETERS; ROOM TEMPERATURES; SIDE-WALLS; SILICON VIAS; SLOPE ANGLES; SUBSTRATE TEMPERATURES; TEMPERATURE DEPENDENCES; VIA HOLES; X-RAY PHOTOELECTRON SPECTROSCOPIES;

REACTIVE ION ETCHING;

EID: 58149351359     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/18/12/125023     Document Type: Article

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