IC compatible fabrication of through-wafer conductive vias

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3223, Issue , 1997, Pages 17-25

  Gobet, Jean ^a   Thiebaud, Jean Philippe ^a,b   Crevoisier, François ^a   Moret, Jean Marc ^a  

^a CSEM   (Switzerland)

^b EPFL   (Switzerland)

Author keywords

Anisotropic plasma etching of silicon; Back side contacts; Parylene; Through holes in silicon; Through wafer vias

Indexed keywords

ANISOTROPIC PLASMA ETCHING OF SILICON; BACK-SIDE CONTACTS; PARYLENE; THROUGH-HOLES IN SILICON; THROUGH-WAFER VIAS;

ANISOTROPIC ETCHING; ANISOTROPY; ASPECT RATIO; COMPOSITE MICROMECHANICS; DRY ETCHING; ETCHING; INDUCTIVELY COUPLED PLASMA; INSULATION; MACHINING; MICROANALYSIS; MICROFABRICATION; MICROMACHINING; NONMETALS; PLASMA ETCHING; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; WET ETCHING;

SILICON WAFERS;

EID: 0010729160     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.284487     Document Type: Conference Paper

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