Deep UV-LEDs with high IQE based on AlGaN alloys with strong band structure potential fluctuations

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8278, Issue , 2012, Pages

  Moustakas, Theodore D ^a   Liao, Yitao ^a   Kao, Chen Kai ^a   Thomidis, Christos ^a   Bhattacharyya, Anirban ^a   Bhattarai, Dipesh ^a   Moldawer, Adam ^a  

^a Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALGAN; ALLOY DISORDER; CARRIER INJECTION LAYER; CONTINUOUS WAVE; DEEP UV LED; DRIVE CURRENTS; EXTERNAL QUANTUM EFFICIENCY; EXTRACTION EFFICIENCIES; GROWTH MODES; INTERNAL QUANTUM EFFICIENCY; OPTICAL OUTPUT POWER; PLASMA-ASSISTED MBE; POLARIZATION FIELD; POTENTIAL FLUCTUATIONS; WAVELENGTH RANGES;

BAND STRUCTURE; LIGHT EMISSION; LIGHTING; QUANTUM EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 84857623815     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.916213     Document Type: Conference Paper

References (47)

1. "Gallium Nitride (GaN) I" J.I. Pankove and T.D. Moustakas Eds. in Semiconductors and Semimetals, Vol. 50 (Academic Press, 1998).
2. "Gallium Nitride (GaN) II" J.I. Pankove and T.D. Moustakas Eds. in Semiconductors and Semimetals, Vol. 57 (Academic Press, 1999).
3. Hadis Morkoc, Handbook Of Nitride Semiconductors and Devices, Vol. 3: GaN-based Optical and Electronic Devices (WILEY-VCH, 2009)
4. A. Khan, K. Balakrishnan, and T. Katona, Nat. Photonics 2, 77 (2008)
5. C. Pernot, M. Kim, S. Fukahori, T. Inazu, T. Fujita, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki and H. Amano, Appl. Phys. Express 3, 061004 (2010)
6. H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, Appl. Phys. Express 3, 031002 (2010)
7. R. Grandusky, S. R. Gibb, M. C. Mendrick, C. Moe M. Wraback and L. J. Schowalter, Appl. Phys. Express 4, 082101 (2011)
8. W.D. Nix and B.M. Clemens, J. Mater. Res., 14, 3467 (1999)
9. Y. Liao, Ph.D. dissertation, Boston University (2011)
10. T. D. Moustakas and A. Bhattacharyya, ECS Transactions 35 (6), 63-71 (2011)
11. I. H. Ho and G. B. Stringfellow, Appl. Phys. Lett. 69, 2701 (1996)
12. R. Singh, D. Doppalapudi, T. D. Moustakas, and L. T. Romano, Appl. Phys. Lett. 70, 1089 (1997)
13. D. Doppalapudi, S. N. Basu, K. F. Ludwig Jr., and T. D. Moustakas, J. Appl. Phys. 84, 1389 (1998)
14. M. L. Nakarmi, N. Nepal, J. Y. Lin and H. X. Jiang, Appl. Phys. Lett. 94, 091903 (2009)
15. K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 84, 5264 (2004)
16. Y. Liao, C. Thomidis, C. Kao, A. Moldawer, W. Zhang, Y. Chang, A. Yu. Nikiforov, E. Bellotti, and T. D. Moustakas, Phys. Status Solidi: Rapid Res. Lett. 4, 49 (2010)
17. Y. Liao, C. Thomidis, C. Kao, and T. D. Moustakas, Appl. Phys. Lett. 98, 081110 (2011)
18. T. D. Moustakas, T. Lei, and R. J. Molnar, Physica B, 185, 36 (1993).
19. Y. Wang, A. Özcan, G. Özaydin, K. Ludwig Jr, A. Bhattacharyya, T. D. Moustakas, H. Zhou, R. Headrick, and D. P. Siddons, Phys. Rev. B. 74, 235304 (2006)
20. L. T. Romano, C. G. Van de Walle, J. W. Ager III, W. Gotz and R. S. Kern, J. Appl. Phys. 87, 7745 (2000).
21. J. P. Zhang et al., Appl. Phys. Lett. 80, 3542 (2002)
22. K. Mayes, A. Yasan, R. McClintock, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, Appl. Phys. Lett. 84, 1046 (2004)
23. www.nextnano.de/nextnano3/overview/overview.htm
24. T. Xu., C. Thomidis, I. Friel, and T. D. Moustakas, Phys. Stat. Sol. (c) 2(7), 2220 (2005).
25. A. Bhattacharyya, W. Li, J. Cabalu, T.D. Moustakas, David J. Smith and R. L. Hervig, Appl. Phys. Lett. 85, 4956 (2004)
26. Ryan France, Tao Xu, Papo Chen, R. Chandrasekaran and T. D. Moustakas, Appl. Phys. Lett. 90, 062115 (2007)
27. S. Pookpanratana, R. France, M. Bar, L. Weinhardt, O. Fuchs, M. Blum, W. Yang, J. D. Denlinger, T. D. Moustakas and C. Heske, Appl. Phys. Lett. 93, 172106 (2008)
28. V. S. Fomenko, Handbook of Thermionic Properties: Electronic Work Functions and Richardson Constants of Elements and Compounds, (Plenum, New York, 1966) p. 103
29. J. S. Foresi and T. D. Moustakas, Appl. Phys. Lett., 62, 2859 (1993)
30. T. D. Moustakas, ECS Transactions Vol. 41 (6), 3-11 (2011)
31. J. E. Northrup, J. Neugebauer, R. M. Feenstra and A. R. Smith, Phys. Rev. B 61, 9932-9935 (2000)
32. A. Nelson Wright and Karl A. Winkler, Active Nitrogen (Academic Press, New York 1968)
33. T. Zywietz, J. Neugebauer and M. Scheffler, Appl. Phys. Lett. 73, 487 (1998)
34. B. Heying, R. Averbeck, L. F. Chen, E. Haus, H. Riechert and J. S. Speck J. Appl. Phys., 88, pp. 1855 (2000).
35. G. Mula, C. Adelmann, S. Moehl, J. Oullier and B. Daudin, Phys. Rev B 64, 195406 (2001)
36. J. Neugebauer, T. K. Zywietz, M. Scheffler, J. E. Northrup, H. Chen and R. M. Feenstra, Phys. Rev. Lett., 90, 56101 (2003).
37. W. E. Hoke, A. Torabi, J. J. Mosca and T. D. Kenedy, J. Va. Sci. and Technol. B25, 978-982 (2007)
38. A. Argoitia, C. C. Hayman and J. C. Angus, Appl. Phys. Lett. 70, 179-181 (1997)
39. E. Iliopoulos and T. D. Moustakas, Appl. Phys. Lett. 81, 295 (2002)
40. A. Bhattacharyya and T. D. Moustakas, Lin Zhou and David J. Smith and W. Hug, Appl. Phys. Lett. 94, 181907 (2009)
41. C. J. Collins, A. V. Sampath, G. A. Garrett, W. L. Samey, H. Shen, M. Wraback, A. Yu. Nikiforov, G.S. Cargill III and V. Dieroff, Appl. Phys. Lett. 86, 031916 (2005)
42. D. Korakakis K. F. Ludwig and T. D. Moustakas, Appl. Phys. Lett. 71, 72 (1997).
43. M. Misra, D. Korakakis, H.M. Ng and T.D. Moustakas, Appl. Phys. Lett. 74, 2203 (1999).
44. E. Iliopoulos and T. D. Moustakas, Appl. Phys. Lett. 78, 463 (2001).
45. Y. Wang, A. S. Ozcan, K. F. Ludwig,Jr., A. Bhattacharyya, T. D. Moustakas, L. Zhou and D. Smith, Appl. Phys. Lett. 88, 181915 (2006)
46. Chen-kai Kao, Ph. D. dissertation, Boston University (2012)
47. Chichibu et al., Nature Mater. 5, 810 (2006)