Experimental evidence that the plasma-assisted MBE growth of nitride alloys is a liquid phase epitaxy process

ECS Transactions

Volumn 35, Issue 6, 2011, Pages 63-71

  Moustakas, Theodore D ^a   Bhattacharyya, Anirban ^a  

^a Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; GROWTH RATE; III-V SEMICONDUCTORS; IONIZATION OF GASES; NITRIDES; NITROGEN PLASMA; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR DEVICES; STATISTICAL MECHANICS;

EXPERIMENTAL EVIDENCE; GA-RICH CONDITIONS; GROWTH PROCESS; III-NITRIDE SEMICONDUCTORS; INHOMOGENEITIES; PLASMA ASSISTED MBE; POTENTIAL FLUCTUATIONS; STATISTICAL FLUCTUATIONS;

WIDE BAND GAP SEMICONDUCTORS;

EID: 79960776426     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3570847     Document Type: Conference Paper

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