AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy

Applied Physics Letters

Volumn 98, Issue 8, 2011, Pages

  Liao, Yitao ^a   Thomidis, Christos ^a   Kao, Chen Kai ^a   Moustakas, Theodore D ^a  

^a Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALGAN; CARRIER INJECTION LAYER; CONTINUOUS WAVE; DEEP UV; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; DRIVE CURRENTS; EXTERNAL QUANTUM EFFICIENCY; GA-RICH CONDITIONS; GROWTH CONDITIONS; INTERNAL QUANTUM EFFICIENCY; OUTPUT POWER; POLARIZATION FIELD; POTENTIAL FLUCTUATIONS; QUANTUM WELL STRUCTURES;

EPITAXIAL GROWTH; GALLIUM; GALLIUM ALLOYS; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR DEVICE STRUCTURES; ULTRAVIOLET RADIATION;

QUANTUM EFFICIENCY;

EID: 79952079361     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3559842     Document Type: Article

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