SCOPUS 정보 검색 플랫폼

ECS Transactions

Volumn 41, Issue 6, 2011, Pages 3-11

Nitride semiconductors: Why they work in optoelectronic devices?

(1) Moustakas, Theodore D a

a Boston University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; BOND STRENGTH (CHEMICAL); CHARGE CARRIERS; CRYSTALLOGRAPHY; DANGLING BONDS; EDGE DISLOCATIONS; GALLIUM ALLOYS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM ALLOYS; NITRIDES; OPTOELECTRONIC DEVICES; SAPPHIRE; SEMICONDUCTOR ALLOYS; SILICON COMPOUNDS; SURFACE STATES;

EXCITON LOCALIZATION; FREE SURFACES; III-V COMPOUNDS; MINORITY CARRIER; NITRIDE SEMICONDUCTORS; NON-RADIATIVE RECOMBINATIONS; POTENTIAL FLUCTUATIONS; RADIATIVE RECOMBINATION;

WIDE BAND GAP SEMICONDUCTORS;

EID: 84857249123 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.3629949 Document Type: Conference Paper

Times cited : (6)

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