Intermixing and chemical structure at the interface between n-GaN and V-based contacts

Applied Physics Letters

Volumn 93, Issue 17, 2008, Pages

  Pookpanratana, S ^a   France, R ^b   Bar M ^a   Weinhardt, L ^a   Fuchs, O ^c   Blum, M ^c   Yang, W ^d   Denlinger, J D ^d   Moustakas, T D ^b   Heske, C ^a  

^a UNIVERSITY OF NEVADA   (United States)

^b Boston University   (United States)

^c UNIVERSITY OF WÜRZBURG   (Germany)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC PHYSICS; ATOMS; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR SPECTROSCOPY; OHMIC CONTACTS; PHOTOELECTRON SPECTROSCOPY; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING GALLIUM; SPECTRUM ANALYSIS; TRANSITION METALS; VANADIUM; VANADIUM ALLOYS;

AUGER ELECTRON SPECTRUMS; BEFORE AND AFTER; CHEMICAL INTERFACES; CHEMICAL STRUCTURES; NITROGEN ATOMS;

ATOMIC SPECTROSCOPY;

EID: 55149088607     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2992199     Document Type: Article

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